Ultra - thin Titanium Oxide Films on

Accession #s 00936, 00937,00938 Mo(112), Measured by XPS Technique: XPS Host Material: #00936: Mo(112) Dheeraj Kumar, Ming Shu Chen, and David W. Goodman) single crystal; #00937: Si02 thin film on MO(112); #00938: TiO, thin Texas A&M University, Department of Chemistl)', College Station, Texas 77842-_Wl2 film on SiO,lMo(112) (Received 26 August 2005; accepted II August 2006; published 28 December 2007) Instrument: Physical Electronics, Inc. 5500 Multitechnique System 1\vo preparation methods were employed to grow a well-ordered ultra-thin titanium oxide film on Mo(J (2), The tirst method consisted of growing the films by direct deposition of Ti by chemical Major Elements in Spectrum: Mo, vapor deposition, followed by oxidation. Better film quality was obtained by the second method Si, Ti, 0, C which involved deposition of Ti onto monolayer SiO/Mo( 112), as described in our prior work. By Minor Elements In Spectrum: none using x-ray photoelectron spectroscopy, Ti was detennined to be in + 3 oxidation state. © 2008 Printed Spectra: 7 American Vacuum Societ)'. [DOl: 10.1116/11.2005080 I]